Abstract
Atom probe tomography studies on highly Mg-doped homoepitaxial GaN (0001) layers with concentrations of 5 × 1019 cm−3 and 1 × 1020 cm−3 were performed. Mg cluster formation was observed only in the higher doped sample whereas in the lower doped sample the Mg distribution was homogeneous. CL measurements have shown that the emission normally attributed to stacking faults was only present in the lower doped layers (with Mg concentration of ∼5 × 1019 cm−3 or less), but absent in the higher doped layer, where Mg clusters were detected. Mg clusters are proposed to produce a screening effect, thereby destroying the exciton binding on the SFs and thus rendering them optically inactive.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
