Abstract
AbstractLaser pulsed atom probe tomography (APT) can provide three‐dimensional chemical and spatial information in semiconductor materials, revealing buried features at the nanoscale. In this investigation, a Mg‐doped AlGaN/GaN superlattice was studied using laser pulsed APT. Such superlattices are commonly used to overcome the intrinsically low doping efficiency of Mg. Although the superlattice was nominally doped to the same level throughout, secondary ion mass spectrometry (SIMS) suggested a greater Mg content in the AlGaN layers.The APT data provided three‐dimensional element mapping and revealed clustered Mg in both the GaN and AlGaN layers. These clusters are shown to be statistically significant when compared to a random distribution of Mg. More clusters were found in the AlGaN layers, suggesting that the presence of clusters accounts for the higher Mg level in the AlGaN layers that was suggested by SIMS. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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