Abstract
The original equation of Spence and Taftø for quantitative determination of site occupancy using atom location by channeling enhanced microanalysis method has been extended to take into account both delocalization effect and the influence of point defects (antisite atomic distribution and vacancies). The outcome of this treatment suggests that, for crystals free of antisite defects, the accuracy of site occupancy is influenced by delocalization effect but is independent of both thermal and structural vacancies. For crystals free of structural vacancies, the accuracy of site occupancy is influenced by both delocalization effect and antisite defects, but is independent of thermal vacancies. The delocalization effect was shown to vary with channeling strength at a given channeling condition. For a binary ordered phase in which at least one of the host elements exhibits weak delocalization effect (as is the case for many transition-metal aluminides), a tangent-line method for obtaining the value of k (a parameter necessary for the calculation of site occupancy) was proposed, allowing the determination of the delocalization correction factor for the other host element. Application of this method to estimating the delocalization effect of Al in Ti3Al and TiAl under axial and planar channeling conditions, respectively, was demonstrated.
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