Abstract
Radio‐frequency (RF) homogeneous dielectric barrier discharge (DBD) is compared to low frequency glow DBD to make silicon oxide from Ar/NH3/SiH4. RF‐DBD is a more powerful discharge, and the growth rate is not limited by precursor dissociation rate but by powder formation. Powders are not deposited in the plasma zone but in the post‐discharge due to their trapping by the electric field. Modulation of the RF‐DBD is a useful solution to avoid powder formation. Powders are systematically avoided if the plasma energy during time on stays below 750 µJ. RF‐DBD modulation also increases the growth rate twofold compare to continuous RF. The optimum growth rate without powder corresponds to a short Ton to limit precursor dissociation, a long Toff to enhance diffusion and a fast repeat frequency to increase deposition rate.
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