Atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD) growth of undoped and aluminium-doped ZnO thin film using hot wall reactor

Abstract

In this contribution, a hot wall reactor via economic atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD) was adopted for Un-doped and Al-doped Zinc oxide films were deposited on borosilicate glass and silicon substrates. To avoid the use of an expensive vacuum system, all experiments were realized at atmospheric pressure. The chemical reagents used for this experiment are Zinc acetylacetonate (Zn(acac)2) and aluminium acetylacetonates (Al (acac)2) under atmospheric conditions. The obtained films are characterized by X-ray diffraction (XRD),scanning electron microscopy (SEM), energy dispersive X-ray (EDX) and Uv-–vis spectrometer, respectively. As results, it is found that The un-doped ZnO films are polycrystalline. However, a significant enhancement in the intensity of the relevant (100) reflection is observed when Zinc oxide films are doped with Al. It is also observed that the Al-doped Zinc oxide films present higher transparency in the visible region and resistivities of 2.55 ohm cm and 1.44 ohm cm for un-doped and Al doped films respectively