Abstract
Atmospheric pressure chemical vapour deposition (APCVD) of vanadium diselenide thin films on glass substrates was achieved by reaction of [V(NMe 2) 4] and t Bu 2Se. X-ray diffraction showed that the VSe 2 films were crystalline with preferential growth either along the (1 0 1) or the (1 1 0) direction. Energy-dispersive analysis by X-rays (EDAX) gave a V:Se ratio close to 1:2 for all films. The films were matt black in appearance, were adhesive, passed the Scotch tape test but could be scratched with a steel scalpel. SEM showed that the films were composed of plate-like crystallites orientated parallel to the substrate which become longer and thicker with increasing deposition temperature. Attempts to produce vanadium selenide films were also performed using t Bu 2Se and two different vanadium precursors: VCl 4 and VOCl 3. Both were found to be unsuitable for producing VSe 2 from the APCVD reaction with t Bu 2Se. The VSe 2 showed charge density wave transition at 110–115 K.
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