Abstract
Nowadays, with the increasing demand for hydrogen, sensors that can detect low concentrations of this gas are essential for its safe use. In this paper, Pd/WO3 film hydrogen sensors are developed using a solid-feed flame vapor deposition (SF-FVD), as an atmospheric, economical, and fast film fabrication method. The crystal structure and morphology of the samples were characterized by different means. The performance of the obtained sensors was investigated for different hydrogen concentrations (1–2500 ppm) and at different operating temperatures (100–250 °C). We attempted to determine the optimum deposition conditions, including feed and substrate to flame nozzle distances. In most of the sensing conditions, the response and recovery times were measured in the order of 20 to 30 s. The layer with a more open morphology showed sensitivity at ppb hydrogen level, good stability, and selectivity. The response behavior of the samples was explained according to the power-law in the metal oxide semiconductor (MOS) gas sensors.
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