Abstract
AbstractA molecular beam epitaxy-grown In0.2Ga0.8As/GaAs strained layer structure has been studied by scanning tunneling microscopy in cross-section on the (110) cleavage plane perpendicular to [001] the growth direction. Individual Indium atoms were differentially imaged in the group III sublattice, allowing a direct observation of the interface roughness due to the indium compositional fluctuation. In the In0.2Ga0.8As layers, Indium atoms are found in clusters preferentially along the growth direction with each cluster containing 2-3 indium atoms. Indium segregation induced asymmetrical interface broadening is studied on an atomic scale. The interface of In0.2Ga0.8As grown on GaAs is sharp within 2-4 atomic layers. The interface of GaAs grown on In0.2Ga0.8As is found to be broadened to about 5-10 atomic layers. The atomic scale fluctuation due to indium distribution is about 20 Å along the interface in this case. We conclude that clustering and segregation are the main reason for the In0.2Ga0.8As/GaAs interface roughness.
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