Abstract
Interactions between shallow implanted boron and high-energy silicon implants have been investigated. Athermal annealing of implantation damage induced by low energy boron implants at room temperature was observed after coimplantation and such annealing effects were more obvious when the dosage of preimplanted Si was increased. Electrical measurements after rapid thermal annealing showed that the activation of B was greatly increased with the dosages of high-energy Si coimplantation. An enhancement of substitutional ratio of B was observed by aligned nuclear reaction analysis.
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