Abstract
We report the design and operation of an at-wavelength system for extreme ultraviolet lithography mask blank defect detection. Initial results demonstrate sensitivity to submicron size phase defects. The performance of the system is compared with the practical requirements for a mask blank inspection system in terms of the sensitivity and scanning time.
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More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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