Asymptotic behavior of solutions to Euler–Poisson equations for bipolar hydrodynamic model of semiconductors

Abstract

In this paper we study the Cauchy problem for 1-D Euler–Poisson system, which represents a physically relevant hydrodynamic model but also a challenging case for a bipolar semiconductor device by considering two different pressure functions and a non-flat doping profile. Different from the previous studies (Gasser et al., 2003 [7], Huang et al., 2011 [12], Huang et al., 2012 [13]) for the case with two identical pressure functions and zero doping profile, we realize that the asymptotic profiles of this more physical model are their corresponding stationary waves (steady-state solutions) rather than the diffusion waves. Furthermore, we prove that, when the flow is fully subsonic, by means of a technical energy method with some new development, the smooth solutions of the system are unique, exist globally and time-algebraically converge to the corresponding stationary solutions. The optimal algebraic convergence rates are obtained.