Asymptotic behavior of channeled electrons: Channeling radiation spectra in thick crystals

Abstract

The absolute intensity of channeling radiation (CR) in thick silicon crystals was evaluated on the basis of the asymptotic model for the behavior of channeled electrons. For line broadening calculation, the complex potential approach was used. The absolute intensity of the CR line 1 → 0 in the plane channel Si(100) within the multiple scattering model has the same scaling with crystal thickness as experimentally measured data. Better agreement between theory and experiment can be reached for the equilibrium population asymptotic model with account of the increased depopulation of bound states near the crystal surface.