Abstract
The metal-oxide filament-based resistance change RAM (RRAM) have a preference toward bi-polar operation. For the first time, the mechanisms behind the operational bias and polarity preference, and the related ramifications for vacancy engineering toward improved bipolar RRAM operations, are explained. Experimental results support detailed models and demonstrate advantages of asymmetric oxygen vacancy engineering with 100% yielding RRAM devices fabricated with the preferred oxygen vacancy profile.
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