Asymmetrical Spin-Polarized Tunneling in a Composed-Barrier Magnetic Tunnel Junctions Under the Forward and Reverse Biases

Abstract

Based on the two-band model and nearly-free-electron approximation, the tunnel current, conductance and magnetoresistance of the composed-barrier magnetic tunnel junctions (MTJ) under the forward and reverse biases are discussed, respectively, and the numerical results are compared with the experimental results of the single-barrier MTJ. We find that there exists an asymmetrical spin-polarized tunneling in this structure under the forward and reverse biases. It suggests that this type of MTJ will provide novel functions to the potential applications of traditional types of MTJ.