Abstract

Fullerenes, especially C70 and C60, and their derivatives are popular acceptor materials for many organic semiconductor devices, including organic photovoltaic cells. One of the main impurities in C70 is C60, and intentional mixture of C60 and C70, or their derivatives, which have been utilized for maximizing the performance of organic photovoltaic cells or perovskite solar cells. However, the influence of impurities in C70 on the device characteristics has not been fully clarified when incorporating C70 into organic devices. To further clarify the relationship between the fullerene mixture and impurities, the effect of impurities in fullerenes on thick photovoltaic cells was evaluated, and a strange asymmetrical impurity effect of the C60:C70 mixture was demonstrated by using C70 with various purities as an acceptor material and zinc phthalocyanine (ZnPc) as a donor material. It was found that C60, C78, and C84 impurities in C70 caused carrier recombination during electron transport, but the same effect of the C70 impurity in C60 was much smaller. Additionally, the impurity effect of higher fullerenes on C70 was clearly larger than that of C60. The effect of higher fullerene impurities can be explained by electron trapping due to their deep lowest unoccupied molecular orbital (LUMO) levels. For the small difference of LUMO energy between C70 and C60, however, it is suggested that the shallow trapping of C70 impurities does not largely inhibit the transport of photocarriers by C60, while the low energy barrier of C60 impurities largely inhibits the transport of photocarriers by C70. For clear comparison, the photoelectrical conversion layers were crystallized using co-evaporant induced crystallization. An effective purification method for C70 using sublimation purification, which depends on the C70 concentration in the sublimation source, is also reported.

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