Abstract
A novel asymmetric wide-coupled waveguide structure is put forward. We optimize the thickness of N-type waveguide and cladding through theoretical calculation of this structure, and adopt LP-MOCVD to grow the designed semiconductor lasers. The fabricated 980nm laser with 1200μm cavity length has a threshold current of 590mA, slope efficiency of 0.96W/A. When the operating current is 2.6A, the output power is 2000mW and the far field divergence angle is 16.1° (vertical) by 10.2° (horizontal). Experimental results indicate that the novel asymmetric wide-coupled waveguide structure can achieve high power output, effectively reduce the vertical far field divergence angle and improve the beam quality of the device.
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