Abstract
The asymmetric underlap device for a floating body cell is proposed without any extra process or photomask during fabrication. The electric field in the gate-drain underlap region is quietly relaxed. It is found that memory operation would fail in bipolar-based floating body cells because band-to-band tunneling significantly alters the body potential. Measurements show the proposed structure could indeed suppress the undesirable band-to-band tunneling greatly so that the bistable state via the parasitic bipolar junction transistor is ensured in scaled floating body cells. The parasitic capacitances in both word line and bit line are also reduced.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
