Abstract

To rectify high frequency AC bias, the characteristics and the structure of asymmetric tunneling metal-insulator-metal (MIM) diode has been studied. Needle like nanometer level electrode structure makes a high probability of electron tunneling due to high electrical field density on the electrode structure. The result enhances the asymmetric characteristic of current-voltage at negative to positive bias sweep, which induces a low leakage current level and a high rectifying efficiency.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call