Abstract
AbstractThe ultra‐wide bandgap and cost‐effective melt‐growth of β‐Ga2O3 ensure its advantages over other wide bandgap materials, and competitive electrical performance has been demonstrated in various device structures. In this paper, an asymmetric double‐gate (ADG) β‐Ga2O3 nanomembrane field‐effect transistor (FET) comprised of a bottom‐gate (BG) metal‐oxide field‐effect transistor and a top‐gate (TG) metal‐semiconductor field‐effect transistor (MESFET) is demonstrated. Schottky contact properties are validated by characterizing the lateral Schottky barrier diode (SBD), which exhibits high rectification ratio and low ideality factor. The top‐gate β‐Ga2O3 MESFET shows reasonable electrical performance with a high breakdown voltage, as anticipated by three terminal off‐state breakdown measurement. These properties are further enhanced by double‐gate operation, and superior device performance is demonstrated; positive‐shifted threshold voltage and reduced subthreshold slope enable the asymmetric double‐gate β‐Ga2O3 FET to operate at low power, and almost twice as much transconductance is demonstrated for high‐frequency operation. These results show the great potential of asymmetric double‐gate β‐Ga2O3 FETs for energy‐efficient high‐voltage and ‐frequency devices with optimal material and structure co‐designs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.