Abstract

We study growth and low temperature magnetotransport of Ga(Al)As based asymmetric double two-dimensional electron gas (2DEG) structures consisting of a quantum well stacked on top of a heterojunction. These structures allow for matching the electron densities in the two parallel 2DEGs by variation of a single growth parameter without the appearance of any parasitic transport channel. At filling factor 2, we observe a 2T wide quantum Hall plateau of metrological quality with a quantized resistance of one quarter of the resistance quantum. Such structures can be used for electrical quantum metrology and to fabricate vertically integrated circuits.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call