Abstract
Geometric diodes, which take advantage of geometric asymmetry to achieve current flow preference, are promising for THz current rectification. Previous studies relate geometric diodes’ rectification to quantum coherent or ballistic transport, which is fragile and critical of the high-quality transport system. Here we propose a different physical mechanism and demonstrate a robust current rectification originating from the asymmetric bias induced barrier lowering, which generally applies to common semiconductors in normal environments. Key factors to the diode’s rectification are carefully analyzed, and an intrinsic rectification ability at up to 1.1 THz is demonstrated.
Highlights
Geometric diodes, which take advantage of geometric asymmetry to achieve current flow preference, are promising for THz current rectification
We have investigated the alternative origin of robust rectification in geometric diodes
We have demonstrated a robust current flow preference originated from an asymmetric bias-induced-barrier lowering (BIBL), while the ballistic transport or quantum coherent is not a necessity
Summary
Geometric diodes, which take advantage of geometric asymmetry to achieve current flow preference, are promising for THz current rectification. Previous studies relate geometric diodes’ rectification to quantum coherent or ballistic transport, which is fragile and critical of the high-quality transport system. The rectification of geometric diodes has been related to quantum coherent or ballistic transport, which is fragile and critical of the transport system. Their operation and highfrequency performance have been simulated with Monte Carlo simulations[18]. We have demonstrated a robust current flow preference originated from an asymmetric bias-induced-barrier lowering (BIBL), while the ballistic transport or quantum coherent is not a necessity. This work provides a fundamental comprehension of geometric diodes, reveals their essential physical mechanisms, and extends their applicable range from specific high-mobility candidates to all general semiconductor materials
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