Abstract
AbstractIt is shown that by using asymmetric barrier composition GaN ‐ (Ga,In)N (GaInN) ‐ (Al, Ga)N (AlGaN) multiple quantum wells it is possible to redshift the room temperature photoluminescence wavelength from 503 nm (blue‐green) to 577 nm (yellow) when the Al composition in the AlGaN barrier increases from 0 to 0.15. This is obtained without modifying the GaInN QW composition and thickness. This effect is attributed to an increase of the internal electric field inside the GaInN QW originating to additional polarization charges at the AlGaN ‐ GaN and GaInN ‐ AlGaN interfaces. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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