Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf>)

Abstract

We report the first demonstration of Ge gate-all-around (GAA) nanowire (NW) p-FETs integrated with a contractible liner stressor. High performance GAA NW p-FET featuring the smallest wire width W <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">NW</sub> of ~3.5 nm was fabricated. Peak intrinsic transconductance G <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> of 581 μS/μm and SS of 125 mV/dec. were demonstrated. When the Ge NW p-FETs were integrated with the phase change material Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Sb <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Te <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> (GST) as a liner stressor, high asymmetric strain was induced in the channel to boost the hole mobility, leading to ~95% intrinsic G <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m, lin</sub> and ~34% extrinsic G <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m, sat</sub> enhancement. Simulations show good scalability of strain due to GST liner stressor and its great potential for hole mobility enhancement.