Abstract
We present the results of some energy level calculations and cw optical experiments performed on biased GaAs-Ga(Al)As double quantum wells. The emphasis is placed on the electric field dependence of electron, hole and exciton transfers from one well to the other. Our experiments, supported by calculations of the impurity and phonon assisted hole transfers, clearly demonstrate the occurrence of resonances in the transfer processes when the field lines up one electron, or hole, or exciton level which is mostly localized in one well with one which is mostly localized in the other well. We also show that the valence band mixing is crucial to understand the hole transfer and that the exciton tunnelling is more efficient when it takes place via the conversion of a direct (in real space) exciton into a crossed (in real space) exciton.
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