Assessment of Thin Heteroepitaxial Layers Using Skew Angle Asymmetrical X-Ray Double Crystal Diffraction

Abstract

Asymmetric reflections in which the beam paths are skew with respect to the sample surface have been used to characterize thin heteroepitaxial layers by double axis X-ray diffractometry. By utilizing reflections with Braqg cones which are partially embedded in the sample surface it is possible to tune to grazing the angles of incidence or emergence. Enhanced layer to substrate peak intensity ratio and narrower layer peak widths can be obtained. The technique is demonstrated using skew angle reflections 333, 133 and 044 from a 400A GaInAsP layer on an InP substrate.