Abstract
Crystal damage of GaAs(100) caused by Reactive Ion Etching (RIE) using a mixture of Cl2 and Ar gas has been assessed using Surface Roughness (Ra), Resonant Raman Spectroscopy (RRS), Schottky diodes, and Spectroscopic Ellipsometry (SE). Plasma conditions for minimum induced damage have been determined and compared to optimised RIE processes using plasma gases SiCl4, CH4-H2, CCl2F2 and Ar. The SiCl4 plasma was found to produce the least crystal damage.
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