Abstract
Zinc oxide (ZnO) is one of the most promising and frequently used semiconductor materials. Zinc oxide (ZnO) thin films are widely used for several applications due to their excellent properties of high electron mobility and good thermal and chemical stability, together with being non-toxic and low cost. The main objective of the present investigation was to identify the modified features of the grown Zinc Oxide thin films on Indium doped Tin Oxide coated conducting glass substrates by employing different physical and chemical growth techniques. The structural analysis confirmed that the both grown thin films preferentially oriented along c-axis with wurtzite crystal structure, however, thin films deposited through aqueous medium holds other planes too. The surface features were examined with scanning electron as well atomic force microscope techniques. The optical properties of the grown thin films will be analyzed through Ultraviolet Visible spectroscopic technique and the results revealed that the deposited films have band gap value within the range between 3.33 and 3.48 eV.
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