Abstract

Nanocrystalline Ba1−xMnxTi1−xPrxKxO3; x = 0.1 was synthesized using precursor solution decomposition method. The material exhibited relaxor behavior both in dielectric and impedance analysis. The grain boundary showed high dc conductivity indicated doubly ionized oxygen vacancy which was also supported from SEM analysis. P-E hysteresis loop supported ferroelectric characteristics of the material with maximum energy storage efficiency 57% at 200 V.

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