Abstract
Recently, ferroelectric semiconductors has become a subject of interest with regard to potential applications in novel electronic and opto-electric devices. One of the most important aspects of employing these materials is band modulation based on spontaneous polarization to generate polarization charges acting as quasi-dopants at metal/ferroelectric and ferroelectric/ferroelectric interfaces. The present study fabricated graphene/Mn-doped BiFeO3 (BFMO)/SrRuO3/SrTiO3(001) capacitor structures with the BFMO having either upward or downward polarization. Band modulation at the graphene/BFMO interface as a result of polarization charges was evaluated using photoemission electron microscopy on the BL17SU beamline at the SPring-8 facility, Japan. The chemical shifts observed in Bi 4f and C 1s XPS spectra indicated that positive (negative) polarization charges acted as quasi-dopants for electron (hole) doping of the BFMO and graphene.
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