Abstract

The solid state reaction method was used to prepare 2 wt% of BaZr0.05Ti0.95O3 doped by (CuO:Ho2O3) in different ratios. The variation in the ratio of CuO:Ho2O3 was fixed at 1:1, 1:2, 1:3, 2:1 and 3:1. The dielectric data and impedance analysis confirmed the non-Debye nature of all the samples. Conductivity results show the Non-overlapping Small Polaron tunnelling conduction mechanism up to 240 °C and the Co-related Barrier Hopping conduction mechanism after 240 °C in the selected temperature range for all the samples. For the Co-related Barrier Hoping model, a sample with a ratio of 1:3 has shown the maximum binding energy value for the charge carrier and a comparatively lesser value of conductivity.

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