Abstract

Objective: The present study was conducted to compare the effects of 810 nm, 980 nm, and dual (810: 50%-980: 50%) diode lasers on the surface modifications of implants contaminated by a standard strain of Escherichia coli. Methods: Based on the operation on their surface, the implants were divided into six groups: "Group 1" was the positive control group undergoing no specific procedures. "Groups 2, 3, 4, 5, and 6" were contaminated by a standard strain of E. coli; "Group 2" was also set as the negative control group. "Groups 3, 4, and 5" were irradiated by 810 nm, 980 nm, and dual lasers (810: 50%-980: 50%; 1.5W, 320 μm fiber) for 30 sec, respectively. "Group 6" was treated using standard titanium brushes. All groups were examined to evaluate the surface modifications by the X-ray diffraction analysis, scanning electron microscope, and atomic force microscopy. Results: The values of carbon, oxygen, aluminum, titanium, and vanadium were significantly different in the surface composition of the contaminated implants from the control groups (p = 0.010, 0.033, 0.044, 0.016, and 0.037, respectively). In all target areas, there were significant differences in surface roughness (p < 0.0001); the same was also true about the pairwise comparison of the study groups (p < 0.0001). "Group 5" demonstrated lower morphological surface changes and roughness degrees. Conclusions: Overall, laser irradiation could alter the surfaces of the contaminated implants. Titanium brushes and 810/980 nm lasers resulted in similar morphological alterations. Dual lasers enjoyed the least degree of morphological alterations and surface roughness.

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