Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

Nadia Norhakim,Zainal Arif Burhanudin,Huzein Fahmi Hawari

doi:10.1109/access.2022.3147832

Abstract

Graphene has been extensively investigated in the context of electronic components due to its attractive properties, such as high carrier mobility and saturation velocity. In the past decade, the graphene field-effect transistor (GFET) has been considered one of the potential devices to be used in future radio frequency (RF) applications and can help usher in the Internet of Things and the 5G communication network. This review presents recent developments of GFETs in RF applications with a focus on components such as amplifiers, frequency multipliers, phase shifters, mixers, and oscillators. Initially, the figures of merit (FoMs) for the GFET are briefly described to understand how they affect these RF components. Subsequently, the FoMs of GFET-based RF components are compared with other non-GFET-based RF components. It is found that, due to its zero-band gap and ambipolar characteristics, GFETs are more suitable for use in frequency multiplier and phase shifter applications, outperforming non-GFET-based RF components. Finally, future research on GFETs themselves as well as GFET-based RF components is recommended. This review provides valuable insights into such components that could give rise to innovative applications in industry.

Highlights

Radio frequency (RF) applications typically require electronic devices to operate in the electromagnetic spectrum, with frequencies varying from 3 kHz to 300 GHz
Starting with the introduction of the GaAs metal-semiconductor field-effect transistor (MESFET) in the 1970s, the RF transistor modernized with the evolution of the III-V high electron mobility transistor (HEMT) in the 1980s, followed by Si bipolar and SiGe bipolar complementary metal-oxide-semiconductors (BiCMOSs) in the 1990s, planar CMOS and GaN HEMTs in the 2000s, and the nonplanar metal-oxide-semiconductor field-effect transistor (MOSFET) in 2011 [1,2]
This review aims to provide an overview of the current state of graphene field-effect transistor (GFET)-based RF components

Summary

INTRODUCTION

Radio frequency (RF) applications typically require electronic devices to operate in the electromagnetic spectrum, with frequencies varying from 3 kHz to 300 GHz. For high frequency RF applications, semiconductor materials with high carrier mobility are preferred [1]. N. Norhakim et al.: Assessing the FoMs of GFET-based RF electronics such materials was challenged in 2004 with the discovery of graphene. The outstanding carrier mobility together with its other unique properties make graphene an excellent material for transistors. Many excellent reviews have summarized the progress of graphene field-effect transistors (GFETs), including material synthesis, material characterization, device fabrication, and characterization, as well as various GFETbased applications [5,6,7,8,9]. Performance is limited by issues such as low surface quality of graphene [35], insufficient drain current saturation, and low cutoff frequency ( ) [36]. The limitations of GFET-based RF components and solutions to improve them are discussed. The paper concludes with an outlook on the future enhancement that can be done to best utilize the GFET in RF components

FIGURES OF MERIT FOR GFET

CONCLUSION

Findings

50 GHz Broadband Resistive FET Ring Mixer Using