Abstract
AbstractUnderstanding the optical properties of individual semiconductor nanostructures is an important step in enabling novel optoelectronic components. The capabilities and limitations of cathodoluminescence microscopy in the scanning and scanning transmission electron microscope in correlating the physical and optical properties of quantum wells, wires and dots is evaluated. In particular the importance of specimen‐electron beam interactions and experimental conditions in maximising spatial resolution are discussed (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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