Abstract
We describe a method of high temperature annealing in which the control of oxygen partial pressure is the principal experimental determinant in obtaining highly c ⊥ oriented thin films of YBa 2 Cu 3 O 7 − δ on YSZ. Film crystallization, morphology and substrate interactions are discussed with detailed reference to the equilibria existing in the YBCO system. A model based on the melt-assisted crystallization of the precursor tetragonal compound, beginning at the free film surface, is used to explain the observed c ⊥ texturing. Excellent Josephson coupling between grains of YBa 2 Cu 3 O 7 − δ in our films is related to melt-assisted growth. We discuss the adverse effects of annealing in pure oxygen at high temperatures.
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