Abstract
We report the design and fabrication of a direct conversion X-ray detector based on Mo/a-Si:H Schottky diodes. Results of X-ray sensitivity are presented for a broad range of medical X-ray energies (20-100 keV), along with the influence of various geometric and operating parameters on detector sensitivity and stability. The detector fabrication process is fully compatible with a-Si:H thin film transistor technology. Measurements, performed in a medical environment, demonstrate the feasibility of the detector for large area medical imaging applications.
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