Abstract
Bulk (crystal-chemical, structural, electrophysical) and surface (acid-base) properties of the AIIIBV (GaAs, GaSb), AIIBVI (ZnSe, ZnTe) type binary compounds, varying in BV, BVI elements and substitution solid solutions (GaAs)x(ZnSe)1-x, (GaSb)x(ZnTe)1-x formed by them have been studied. The acidic sites’ natures, strength, concentration have been estimated. The consistent patterns have been established in changes in bulk and acid-base properties with changes in the each particular system components composition; general and differential characteristics in the components “behavior” of the two GaAs-ZnSe and GaSb-ZnTe systems have been revealed. Justification has been given. Reasons have been given on the possibility of predicting the surface activity of such systems’ solid solutions. Practical guidelines on the use of their most active representatives in semiconductor gas analysis have been provided.
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