As-grown epitaxial YBaCuO films prepared by low energy oxygen ion assisting ion beam sputtering

Abstract

The as-grown epitaxial YBaCuO films on (100) and (110)SrTiO 3 substrates were prepared by ion beam sputtering method with low accelerating oxygen ion assist. Oxygen ions were produced by the Kaufman type single grid ion source with the filament protection to oxygen. The orientation of epitaxial films on(100)SrTiO 3 substrate were varied by both the assisting ion current density and substrate temperature; the c-axis of film tended to be normal at higher substrate temperature and lower oxygen ion current, while the c-axis of the films tended to lie on the substrate at lower substrate temperature and higher oxygen ion current. The same trend was observed on a (110)SrTiO 3 substrate; the 〈110〉 orientation formed at lower substrate temperature and higher oxygen ion current, in contrast 〈103〉 formed at higher substrate temperature and lower oxygen ion current.