Abstract
The effect of the As4/Ga flux ratio R on Si incorporation into GaAs grown by molecular beam epitaxy has been investigated by studying the electrical characteristics and the secondary ion mass spectroscopy. It was found that the Si sticking coefficient depend on R, and the incorporation mechanism was expected to be different in the region between 0.7<R<8 and 8<R<40. A model to explain observed results is proposed.
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