Abstract
The migration of implanted As durinq PtSi formation on (100) Si wafers has been studied by Rutherford backscattering techniques. Two thicknesses of PtSi layer (50 and 200 nm) have been choosen for this study. The PtSi formation temperatures were either 525°C or 625°C. The data show that the number of the migrating As atoms is independent of the PtSi thickness or formation temperatures used in this investigation.
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