Abstract
The possibilities of using thin layers of As 2S 3 and AgI as ion sensitive membranes for ion selective field-effect transistors (ISFETs) are investigated. The thin films have been prepared by vacuum deposition on static and rotating substrates. The As 2S 3 layers were additionally doped with silver. The influence of the type of substrates and preparation conditions on electrochemical properties of the layers was studied. Electrochemical measurements revealed a reasonable sensitivity of chalcogenide and halide layers to silver and iodide ions, respectively. The near Nernstian behavior of sensitivity of As 2S 3 layers to Ag + ions and of AgI layers to I − ions is observed. The results obtained are promising for the development of ISFETs.
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