Abstract
In bilayer and multilayer resist processes only silicon-containing polymers have been studied most extensively as oxygen etch barrier layers. We wish to report the aryloxy-poly(phosphazenes) can be used as an oxygen etch barrier layer with a very small etch rate and can be imaged under e-beam, x-ray, and UV exposure in the presence of a sensitizer; a sensitivity of 20 mJ/cm2 at 254 nm and that of 55 mJ/cm2 at 4.4 Å of x-ray were obtained, and for 25 keV electron beam exposures, a sensitivity of 0.7 μC/cm2 was obtained. These poly(phosphazenes) can be removed readily by CF4–reactive ion etching (RIE) or by aqueous and organic solvents.
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