Abstract
We present a proposal for realization of an electrical memory reminiscent of a memristor in connected Kagome artificial spin ice. We show that current flowing through the system alters the magnetic ensemble, which in turns controls the overall resistance thus leaving memory of current passage in the system. This introduces a current-dependent effect for a dynamic resistive state. We simulate a spin-induced thermal phase-change mechanism, and an athermal domain-wall spin inversion. In both cases we observe electrical memory behavior with an I–V hysteretic pinched loop, typical of memristors. These results can be extended to the more complex geometries in which artificial spin ice can be designed to engineer the hysteresis curve.
Highlights
The study of interacting magnetic nanostroctures called artificial spin ices [1–9] has reached a level of control [10–19] that should open the way to technological applications
Since spin ice materials encode naturally internal states in some observable systemic phenomena, it has been suggested that these meta-materials can be engineered for the purpose of logical computation [25–29]
In this work we explore whether connected artificial spin ice can function as a memristor by solving the collective dynamics of currents that alter the magnetic texture, which in turns alters the localized resistance and the currents themselves
Summary
The study of interacting magnetic nanostroctures called artificial spin ices [1–9] has reached a level of control [10–19] that should open the way to technological applications. Because we expect the typical memristive v − i hysteresis to be small, it is possible to see the change in the resistances from the v − r Lissajous figures (Fig. 2), obtained from the functional dependence of the effective resistance which we have obtained Another mechanism for moment inversion in nanowires which does not require very careful fine tuning of the temperature, is the current-induced domain wall inversion via spin-transfer [54]. We have derived exact and general equations which show, given a certain spin ice lattice, how the resistance of the material changes given the internal configuration This has enabled us to obtain first order contributions to the resistance, showing that there exist an effective resistance in parallel to the nanowires network and which depends on the internal state of magnetization.
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