Abstract
ABSTARCTExcimer laser annealing method employing artificial nucleation seed is proposed to increase the grain size of polycrystalline silicon(poly-Si). We utilize Si component incorporated in aluminum(Al)-sputtering source for the nucleation seed. Si clusters which are to be used as nucleation seed are successfully formed on the substrate by deposition and etch-back of Si-incorporated Al layer. Irradiation of excimer laser on amorphous silicon(a-Si) film deposited on the substrate prepared by our method results in enlargement of poly-Si grains, compared with conventional laser recrystallization. Poly-Si thin film transistor also shows much improved electrical perfbrmance which directly reflects the quality of poly-Si film recrystallized by our method.
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