Abstract
The results of the investigation on artificial epitaxy (graphoepitaxy) of various semiconductors (silicon, cadmium sulphide) are presented. Single-crystal or generally oriented layers of the materials were grown on amorphous substrates (oxidized silicon or glass) having crystallographically-symmetric microrelief. In experiments with zone-melting-recrystallization of silicon, the orienting action of the microrelief is confirmed by comparison of the structure of the layers on areas with and without the microrelief. In experiments with cadmium sulphide, artificial epitaxy as a result of solid-state recrystallization was demonstrated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
