Artificial Electro-Optical Neuron Integrating Hot Electrons in a Mott Insulator

Abstract

Mott insulators are a class of strongly correlated materials with emergent properties important for modern electronics applications, such as artificial neural networks. Under an electric field, these compounds undergo a resistive switching that may be used to build up artificial neurons. However, the mechanism of this resistive switching is still under debate and may depend on the Mott material involved. Some works suggest an electronic avalanche phenomenon, while others propose an electrothermal scenario. As electric pulses produce both Joule heating and hot carriers, disentangling their respective roles requires the use of another external stimulus. Here, an ultrashort light pulse is used to tune the number of photogenerated carriers and the energy provided to the system. In these pump-pump-probe experiments, a crystal of the Mott insulator ${\mathrm{Ga}\mathrm{Ta}}_{4}{\mathrm{Se}}_{8}$ is simultaneously excited by electric and laser pulses while an electric probe monitors its conductivity. The study shows that the resistive switching is affected by the number of generated photocarriers rather than by the accumulation of energy deposited by the femtosecond laser. It supports therefore a mechanism driven by generation of hot carriers. Finally, our work opens the possibility to build up an artificial electro-optical ``Mott'' neuron tuned by a femtosecond laser pulse.