Abstract
The refractive index of a conventional dielectric layer can be enhanced using an Artificial Dielectric Layer (ADL). Here we present the fabrication of low temperature PECVD Silicon Carbide (SiC) membranes with very high refractive index (up to 5 at 1 THz) in the terahertz frequency range. The SiC deposition parameters have been tuned to reach a very low residual stress level (-25 to 100MPa). The excellent mechanical properties of this material allowed the fabrication of very large square membranes (5mm side) with a thickness from 5μm to 10μm. Using silicon carbide as host material, ADL with a refractive index of 9.9 at 1 THz can be effectively realized.
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