Abstract
A new method of cleaning InP substrates under molecular beam epitaxy conditions involving heating to ⩾500 °C in an As4 flux (JAs4 ≃1015–1016 cm−2 s−1) is described. Evidence of surface cleanliness, good morphology, ordered surface reconstruction, and integrity of chemical composition at the interface is given. Lattice-matched layers of Ga0.47In0.53As grown on InP substrates cleaned in this way showed excellent electrical properties: e.g. a room-temperature mobility μ300=8600 cmPu2 V−1 s−1 at n300 =1016 cm−3.
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