Arsenic pressure dependence of pure two-face inter-surface diffusion between (0 0 1) and (1 1 1)B in molecular beam epitaxy of GaAs

Abstract

Inter-surface diffusion between (0 0 1) and (1 1 1)B surfaces was studied. From the measurements of the growth rates of top, side and bottom surfaces, it turned out that if the length of the sidewall is short, three-face inter-surface diffusion takes place on mesa-structures. To prevent such complexity, the (1 1 1)B long sidewall was prepared by mask LPE and pure two-face inter-surface diffusion was studied using microprobe-RHEED/SEM MBE. It was confirmed that the direction of pure two-face inter-surface diffusion between the (0 0 1) top surface and the (1 1 1)B sidewall is reversed by varying the arsenic pressure, although the critical value of the arsenic pressure was different from the previously reported value on the short-sidewall mesas.