Abstract
The loss of arsenic during reaction between GaAs (single crystal and thin film) and palladium (Pd) is reported. A chromium thin film was used as a collector for evaporating material during heat treatment. The amount of arsenic on the chromium collector was measured using backscattering spectrometry. It was found that more arsenic evaporates from the reacting GaAs/Pd samples than from bare GaAs.
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