Abstract
We report the results of in situ arsenic doping in HgCdTe layers grown by molecular beam epitaxy (MBE). Arsenic incorporation was carried out by two mechanisms called conventional doping and planar doping. The obtained results indicate that for both mechanisms, after Hg anneal, arsenic was successfully incorporated as an acceptor during the MBE growth. Secondary ion mass spectrometry and Hall-effect measurements before and after Hg annealing were used to characterize arsenic activity in the grown layers. Close to 100% acceptor doping efficiency with arsenic has been obtained on these MBE grown layers up to total arsenic concentrations of approximately 2×1018 cm−3, which is more than sufficient for a wide range of infrared devices. At much higher total arsenic concentrations, electrical activity falls off drastically as the doping level saturates.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
